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RDD023N50 nch 500v 2a power mosfet t j c mj e ar *4 avalanche energy, single pulse avalanche energy, repetitive avalanche current 2.0 e as *3 1.48 mj p d 51 21 i d,pulse *2 i d *1 0.9 a a v ? 20 v/ns 150 reverse diode dv/dt i ar *3 range of storage temperature t stg power dissipation (t c = 25c) c w junction temperature a dv/dt *5 15 ? 55 to ? 150 unit 500 v dss i d *1 a v tl marking 023n50 ? features v gss ? 8 continuous drain current basic ordering unit (pcs) pulsed drain current gate - source voltage parameter t c = 100c switching power supply ? 2 value t c = 25c symbol ? absolute maximum ratings (t a = 25c) drain - source voltage ? outline ? inner circuit ? packaging specifications cpt3 (sc-63) (sot-428) 500v 5.4 ? 51w 2a 5) parallel use is easy. v dss r ds(on) (max.) i d p d 1) low on-resistance. 4) drive circuits can be simple. 2) fast switching speed. tape width (mm) 16 3) gate-source voltage (v gss ) guaranteed to be ? 30v. ? application reel size (mm) 6) pb-free lead plating ; rohs compliant taping 330 type packaging 2,500 taping code ? 1 body diode (1) gate (2) drain (3) source ?1 (1) (2) (3) (1) (2) (3) 1/13 2016.02 - rev.b datasheet www.rohm.com ? 2015 rohm co., ltd. all rights reserved.
RDD023N50 v gs = 4v, id = 1a ? gate input resistance r g f = 1mhz, open drain - 5.5 - static drain - source on - state resistance ? t j = 25c r ds(on) *6 v gs = 10v, i d = 1a t j = 25c - 4.0 5.4 t j = 125c - 8.24 - - unit max. - 580 - - 100 265 c/w 4.1 5.5 gate threshold voltage v gs (th) v ds = 10v, i d = 1ma 1.0 gate - source leakage current v gs = ? 20v, v ds = 0v - - zero gate voltage drain current v 2.0 i gss - thermal resistance, junction - ambient soldering temperature, wavesoldering for 10s ? electrical characteristics (t a = 25c) parameter drain - source breakdown voltage v ds = 500v, v gs = 0v drain - source avalanche breakdown voltage - 500 conditions symbol v (br)ds - min. values typ. 100 - unit t sold r thja min. r thjc symbol - unit c/w values v/ns t j = 125c 50 - 2.41 - c - v (br)dss v gs = 0v, i d = 2a v gs = 0v, i d = 1ma i dss ? a t j = 125c v v - ? a 1000 ? 25 - - t j = 25c drain - source voltage slope dv/dt v ds =400v, i d = 2a - typ. symbol conditions values ? absolute maximum ratings ? thermal resistance thermal resistance, junction - case parameter max. parameter 2/13 2016.02 - rev.b www.rohm.com ? 2015 rohm co., ltd. all rights reserved. data sheet
RDD023N50 *1 limited only by maximum temperature allowed. *2 p w ? 10 ? s, duty cycle ? 1% *3 l ? 500? h, v dd = 50v, r g = 25 ? , starting t j = 25c *4 l ? 500? h, v dd = 50v, r g = 25 ? , starting t j = 25c, f = 10khz *5 reference measurement circuits fig.5-1. *6 pulsed max. reverse transfer capacitance z electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. 3.0 transconductance input capacitance 1.5 output capacitance c oss v ds = 25v - -s c iss v gs = 0v - 151 - g fs *6 v ds = 10v, i d = 1a pf- c rss f = 1mhz - 3 - 26 pf - 9.74 - - 14.9 turn - on delay time t d(on) *6 v dd ? 250v, v gs = 10v - effective output capacitance, energy related effective output capacitance, time related c o(er) c o(tr) v gs = 0v v ds = 0v to 400v 16 r g = 10 ? - turn - off delay time t d(off) *6 r l = 249 ? - fall time t f *6 - - typ. ns 35 - 32 - - - max. unit nc - parameter z gate charge characteristics (t a = 25c) rise time t r *6 i d = 1a symbol values 13 v gs = 10v - 1.5 - min. 11 - conditions total gate charge gate - source charge q gs *6 i d = 2a q g *6 v dd ? 250v 3.0 - 2.8 - v gate plateau voltage v (plateau) v dd ? 250v, i d = 2.0a -- gate - drain charge q gd *6 3/13 2016.02 - rev.b www.rohm.com ? 2015 rohm co., ltd. all rights reserved. data sheet
RDD023N50 * mounted on 25mm x 25mm x 0.8mm glass epoxy board with both side copper. packaging c th2 0.0115 unit - a a 1.5 v ns 8.0 2.0 0.00194 i s =2a di/dt =100a/ p s 380 -- peak rate of fall of reverse recovery current di rr /dt - value ? typical transient thermal characteristics 65 - symbol value unit symbol -a a/ p s - t j = 25c inverse diode direct current, pulsed k/w ws/k r th3 21.5 c th3 0.14 1.16 c th1 r th1 r th4 48.1 c th4 1.24 r th2 2.24 i sm *2 - ? body diode electrical characteristics (source-drain)(t a = 25c) -1.14- p c v sd *6 v gs = 0v, i s = 2a typ. forward voltage reverse recovery time unit min. max. inverse diode continuous, forward current t c = 25c - peak reverse recovery current parameter symbol conditions values reverse recovery charge t rr *6 - -6.0 - q rr *6 i rrm *6 i s *1 4/13 2016.02 - rev.b www.rohm.com ? 2015 rohm co., ltd. all rights reserved. data sheet
RDD023N50 ? electrical characteristic curves 0 20 40 60 80 100 120 0 50 100 150 200 0.0001 0.001 0.01 0.1 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 t a = 25oc single pulse r th(ch-a)(t) = (t) r th(ch-a) r th(ch-a) = 100oc/w top d = 1 d = 0.5 d = 0.1 d = 0.05 d = 0.01 d = single fig.1 power dissipation derating curve power dissipation : p d /p d max. [%] junction temperature : t j [ r c] fig.2 normalized transient thermal resistance vs. pulse width normalized transient thermal resistance : r (t) pulse width : p w [s] 5/13 2016.02 - rev.b www.rohm.com ? 2015 rohm co., ltd. all rights reserved. data sheet
RDD023N50 ? electrical characteristic curves 0 1 2 3 4 5 0.01 0.1 1 10 100 t a = 25oc v dd = 50v, r g = 25 ? v gf = 10v, v gr = 0v 0 500 1000 1500 2000 2500 3000 3500 4000 1.0e+04 1.0e+05 1.0e+06 t a =25oc 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 fig.3 avalanche current vs inductive load avalanche current : i ar [a] coil inductance : l [mh] fig.4 avalanche power losses avalanche power losses : p ar [w] frequency : f [hz] fig.5 avalanche energy derating curve vs junction temperature avalanche energy : e as / e as max. [%] junction temperature : t j [oc] 6/13 2016.02 - rev.b www.rohm.com ? 2015 rohm co., ltd. all rights reserved. data sheet
RDD023N50 ? electrical characteristic curves 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 1020304050 t a =150oc pulsed v gs = 10.0v v gs = 3.5v v gs = 1.5v v gs = 2.5v 0.0 0.1 0.2 0.3 0.4 0.5 012345 t a =150oc pulsed v gs = 10.0v v gs = 3.5v v gs = 1.5v v gs = 2.5v 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 1020304050 t a =25oc pulsed v gs = 10.0v v gs = 4.5v v gs = 4.0v v gs = 3.0v v gs = 2.6v v gs = 2.0v v gs = 1.5v v gs = 2.5v 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 012345 t a =25oc pulsed v gs = 10.0v v gs = 4.5v v gs = 4.0v v gs = 2.5v v gs = 2.0v v gs = 1.5v v gs = 3.0v fig.6 typical output characteristics(i) fig.7 typical output characteristics(ii) fig.8 t j = 150 c typical output characteristics(i) fig.9 t j = 150 c typical output characteristics(ii) drain - source voltage : v ds [v] drain - source voltage : v ds [v] drain current : i d [a] drain current : i d [a] drain current : i d [a] drain - source voltage : v ds [v] drain current : i d [a] drain - source voltage : v ds [v] 7/13 2016.02 - rev.b www.rohm.com ? 2015 rohm co., ltd. all rights reserved. data sheet
RDD023N50 ? electrical characteristic curves 500 520 540 560 580 600 620 640 660 680 700 -50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v ds = 10v plused t a =125oc t a =75oc t a =25oc t a = ? 25oc 0 1 2 3 -50-25 0 255075100125150 v ds = 10v i d = 1ma plused 0.01 0.1 1 10 0.01 0.1 1 10 v ds = 10v plused t a = ? 25oc t a =25oc t a =75oc t a =125oc fig.11 typical transfer characteristics fig.10 breakdown voltage vs. junction temperature drain - source breakdown voltage : v (br)dss [v] drain current : i d [a] fig.12 gate threshold voltage vs. junction temperature gate threshold voltage : v gs(th) [v] junction temperature : t j [ r c ] fig.13 transconductance vs. drain current transconductance : g fs [s] drain current : i d [a] junction temperature : t j [ r c ] gate - source voltage : v gs [v] 8/13 2016.02 - rev.b www.rohm.com ? 2015 rohm co., ltd. all rights reserved. data sheet
RDD023N50 ? electrical characteristic curves 0 1 2 3 4 5 6 7 8 9 10 012345678910 i d = 1.0a i d = 2.0a t a =25oc pulsed 0 1 2 3 4 5 6 7 8 9 10 11 12 -50 -25 0 25 50 75 100 125 150 i d = 1.0a i d = 2.0a v gs = 10v plused 1 10 100 0.01 0.1 1 10 v gs = 10v plused t a =125oc t a =75oc t a =25oc t a = ? 25oc fig.14 static drain - source on - state resistance vs. gate source voltage static drain - source on-state resistance : r ds(on) [ ? ] gate - source voltage : v gs [v] fig.15 static drain - source on - state resistance vs. junction temperature static drain - source on-state resistance : r ds(on) [ ? ] junction temperature : t j [oc] fig.16 static drain - source on - state resistance vs. drain current static drain - source on-state resistance : r ds(on) [ ? ] drain current : i d [a] 9/13 2016.02 - rev.b www.rohm.com ? 2015 rohm co., ltd. all rights reserved. data sheet
RDD023N50 ? electrical characteristic curves 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 100 200 300 400 500 t a =25oc 1 10 100 1000 0.01 0.1 1 10 100 1000 c oss c rss c iss t a =25oc f = 1mhz v gs = 0v fig.17 typical capacitance vs. drain - source voltage capacitance : c [pf] drain - source voltage : v ds [v] fig.19 switching characteristics switching time : t [ns] drain current : i d [a] fig.20 dynamic input characteristics total gate charge : q g [nc] gate - source voltage : v gs [v] coss stored energy : e oss [uj] fig.18 coss stored energy drain - source voltage : v ds [v] 1 10 100 1000 10000 0.01 0.1 1 10 t r t f t d(on) t d(off) v dd P 250v v gs = 10v r g = 10 : t a = 25oc pulsed 0 2 4 6 8 10 0123456789101112 t a = 25oc v dd = 250v i d = 2a pulsed 10/13 2016.02 - rev.b www.rohm.com ? 2015 rohm co., ltd. all rights reserved. data sheet
RDD023N50 ? electrical characteristic curves 0.01 0.1 1 10 0.0 0.5 1.0 1.5 v gs =0v pulsed t a =125oc t a =75oc t a =25oc t a = ? 25oc 10 100 1000 10000 0.1 1 10 t a =25oc v gs = 0v di / dt = 100a / ? s pulsed fig.21 inverse diode forward current vs. source - drain voltage inverse diode forward current : i s [a] source - drain voltage : v sd [v] fig.22 reverse recovery time vs.inverse diode forward current reverse recovery time : t rr [ns] inverse diode forward current : i s [a] 11/13 2016.02 - rev.b www.rohm.com ? 2015 rohm co., ltd. all rights reserved. data sheet
RDD023N50 ? measurement circuits fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform fig.3-1 avalanche measurement circuit fig.3-2 avalanche waveform fig.4-1 dv/dt measurement circuit fig.4-2 dv/dt waveform fig.5-1 di/dt measurement circuit fig.5-2 di/dt waveform v gs i g(const.) v ds d.u.t. i d r l v dd 90% 90% 90% 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) v gs r g v ds d.u.t. i d r l v dd v g v gs charge q g q gs q gd v gs r g v ds d.u.t. i as l v dd i as v dd v (br)dss i as 2 l e as = v (br)dss - v dd v (br)dss 1 2 v gs r g v ds d.u.t. i as l v dd i as v dd v (br)dss driver mosfet r g d.u.t. l i f v dd t rr i rr 100% i rr i f 0 i rr 90% d rr / d t i rr 10% 12/13 2016.02 - rev.b www.rohm.com ? 2015 rohm co., ltd. all rights reserved. data sheet
RDD023N50 ? dimensions (unit : mm) dimension in mm / inches cpt3 d b1 e b b3 b2 l3 a2 h a1 a3 c l1 lp x ba l e l2 l3 l2 l1 b6 b5 e l4 c1 b a pattern of terminal position areas [not a recommended pattern of soldering pads] min max min max a1 0.00 0.15 0.000 0.006 a2 2.20 2.50 0.087 0.098 a3 b 0.55 0.75 0.022 0.030 b1 5.00 5.30 0.197 0.209 b2 b3 c 0.40 0.60 0.016 0.024 c1 0.40 0.60 0.016 0.024 d 6.30 6.70 0.248 0.264 e 5.40 5.80 0.213 0.228 e h e 9.00 10.00 0.354 0.394 l 2.20 2.80 0.087 0.110 l1 0.80 1.40 0.031 0.055 l2 1.20 1.80 0.047 0.071 l3 l4 lp 1.00 1.60 0.039 0.063 x - 0.25 - 0.010 min max min max b5 - 1.00 - 0.04 b6 - 5.20 - 0.205 1 - 2.50 - 0.098 2 - 5.50 - 0.217 3 - 10.00 - 0.394 dim milimeters inches 0.25 0.010 5.00 0.197 0.75 0.030 2.30 0.091 5.30 0.209 0.90 0.035 dim milimeters inches 13/13 2016.02 - rev.b www.rohm.com ? 2015 rohm co., ltd. all rights reserved. data sheet
notice - p ga - e rev.00 3 ? 201 5 rohm co., ltd. all rights reserved. notice precaution on using rohm products 1. our p roducts are designed and manufactured for application in ordinary electronic equipment s ( such as av equipment, oa equipment, telecommunication equipment, home elec tronic appliances, amusement equipment, etc.). if you intend to use our products in devices requiring extremely high reliability ( such as medical equipment ( n ote 1 ) , transport equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, f uel controllers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life , bodily injury or serious damage to property ( specific applications ) , please consult with the rohm sales represe ntative in advance. unless otherwise agreed in writing by rohm in advance, rohm shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any rohm s products for specific appl ications. ( n ote1) m edical e quipment c lassification of the s pecific applications japan usa eu china class 2. rohm designs and manufactures its products subject to strict quality control system. however, semiconductor products can fail or malfunction at a certain rate. please be sure to implement, at your own responsi bilities, adequate safety measures including but not limited to fail - safe design against the physical injury, damage to any property, which a failure or malfunction of our products may cause. the following are examples of safety measures: [a] installation of protection circuits or other protective devices to improve system safety [b] installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. our p roducts are designed and manufactured for use under standard conditions a nd not under any special or extraordinary environments or conditions, as exemplified below . accordingly, rohm shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any rohms p roduct s under any special or extraordinary environments or conditions . if you intend to use our products under any special or extraordinary environments or conditions (as exemplified below), your independent v erification and confirmation of product performance, reliability, etc, pri or to use, must be necessary : [a] use of our products in any types of liquid, including water, oils, chemicals, and organic solvents [b] use of our products outdoors or in places where the p roducts are exposed to direct sunlight or dust [c] use of our prod ucts in places where the p roducts are exposed to sea wind or corrosive gases, including cl 2 , h 2 s, nh 3 , so 2 , and no 2 [d] use of our products in places where the p roducts are exposed to static electricity or electromagnetic waves [e] use of our products in p roximity to heat - producing components, plastic cords, or other flammable items [f] s ealing or coating our p roducts with resin or other coating materials [g] use of our products without cleaning residue of flux (even if you use no - clean type fluxes, cleanin g residue of flux is recommended); or washing our products by using water or water - soluble cleaning agents for cleaning residue after soldering [h] use of the p roducts in places subject to dew condensation 4 . the p roducts are not subject to radiation - proo f design . 5 . please verify and confirm characteristics of the final or mounted products in using the products. 6 . in particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied, confirmation of pe rformance characteristics after on - board mounting is strongly recommended. avoid applying power exceeding normal rated power; exceeding the power rating under steady - state loading condition may negatively affect product performance and reliability. 7 . de - rate power dissipation d epending on a mbient temperature . when used in sealed area, confirm that it is the use in the range that does not exceed the maximum junction temperature. 8 . confirm that operation temperature is within the specified range described in the product specification. 9 . rohm shall not be in any way responsible or liable for f ailure induced under devian t condition from what is defined in this document . precaution for mounting / circuit board design 1. when a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product performance and reliability. 2. in principle, the reflow soldering method must be used on a surface - mount products, the flow soldering method must be used on a through hole mount products. i f the flow soldering method is preferred on a surface - mount products , please consult with the roh m representative in advance. for details , please refer to rohm mounting specification
notice - p ga - e rev.00 3 ? 201 5 rohm co., ltd. all rights reserved. precautions regarding application examples and external circuits 1. if change is made to the constant of an external circuit, please allow a sufficient margin considerin g variations of the characteristics of the p roducts and external components, including transient characteristics, as well as static characteristics. 2. you agree that application notes, reference designs, and associated data and information contained in t his document are presented only as guidance for products use . therefore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in t his document. rohm shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information. precaution for electrostatic this p roduct is e lectrostatic sensitive product, which may be damaged due to e lectrostatic discharge. please take proper caution in your manufacturing process and stor age so that voltage exceeding the product s maximum rating will not be applied to p roducts. please take special care under dry condition (e .g. grounding of human body / equipment / solder iron, isolation from charged objects, setting of ionizer, friction prevention and temperature / humidity control). precaution for storage / transportation 1. product performance and soldered connections may deteriorate if the p roducts are stored in the places where : [a] the p roducts are exposed to sea winds or corrosive gases, including cl2, h2s, nh3, so2, and no2 [b] the temperature or humidity exceeds those recommended by rohm [c] the products are exposed to direct sunshine or condensation [d] the products are exposed to high electrostatic 2. even under rohm recommended storage condition, solderability of products out of recommended storage time period may be degraded. it is strongly recommended to confirm solderability before using p roducts of which storage time is exceeding the recommended storage time period. 3. store / transport cartons in the correct direction, which is indicated on a carton with a symbol. otherwise bent leads may occur due to excess ive stress applied when dropping of a carton. 4. use p roducts within the specified time after opening a humidity barrier bag. baking is required before using p roducts of which storage time is exceeding the recommended storage time period . precaution for p roduct l abel a two - dimensional barcode printed on rohm p roduct s label is for rohm s internal use only . precaution for d isposition when disposing p roducts please dispose them properly using a n authorized industry waste company. precaution for foreign e xchange and foreign t rade act since concerned goods might be fallen under listed items of export control prescribed by foreign exchange and foreign trade act, please consult with rohm in case of export. precaution regarding intellectual property rights 1. all information an d data including but not limited to application example contained in this document is for reference only. rohm does not warrant that foregoing information or data will not infringe any intellectual property rights or any other rights of any third party reg arding such information or data. 2. rohm shall not have any obligations where the claims, actions or demands arising from the combination of the products with other articles such as components, circuits, systems or external equipment (including software). 3. no license, expressly or implied, is granted hereby under any intellectual property rights or other rights of rohm or any third parties with respect to the products or the information contained in this document. provided, however, that rohm will not assert it s intellectual property rights or other rights against you or your customers to the extent necessary to manufacture or sell products containing the products, subject to the terms and conditions herein. other precaution 1. this document may not be reprinted or reproduced, in whole or in part, without prior written consent of rohm. 2. the products may not be disassemble d, converted, modified, reproduced or otherwise changed without prior written consent of rohm. 3. i n no event shall you use in any way whatso ever the products and the related technical information contained in the products or this document for any military purposes , including but not limited to, the development of mass - destruction weapons . 4. the proper names of companies or products described in this document are trademarks or registered trademarks of rohm, its affiliated companies or third parties.

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